zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) facsimile: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 87 modular avenue 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny11725 hing fong road, kwai fong major countries world-wide telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 ? zetex plc 1995 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1055A spice model last revision 25/1/95 * .model ZTX1055A npn is=1.60e-12 nf=1.0 bf=500 ikf=4.0 vaf=120 + ise=4.0e-13 ne=1.4 nr=1.0 br=80 ikr=2.5 var=15 + isc=5.0e-10 nc=1.7 rb=0.1 re=0.040 rc=0.030 + cjc=63.3e-12 cje=512.6e-12 mjc=0.439 mje=0.373 + vjc=0.511 vje=0.800 tf=700e-12 tr=110e-9 * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. c b e e-line to92 compatible npn silicon planar medium power high gain transistor issue 3 ? january 1995 features *v ceo =120v * 3 amp continuous current * 6 amp pulse current * very low saturation voltage applications * automotive switching circuit * audio driver stages absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 175 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5v peak pulse current i cm 6a continuous collector current i c 3a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c ZTX1055A ZTX1055A
ZTX1055A ZTX1055A 1ma 1ma 10ma 1ma 100ma 1a 10a 10ma 1ma 100ma 1a 10a 10ma 1ma 100ma 1a 10a +25c +100c -55c 200 400 600 v ce =10v 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 +25c i c /i b =20 i c /i b =30 i c /i b =50 v ce =10v i c /i b =20 i c /i b =20 +100c +175c +25c -55c 10a 1a 100ma 10ma 10ma 100ma 1a 10a 100v 10v 0.1v 1v 10 0.1 0.01 1 dc 1s 100ms 10ms 1ms 100us i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c i c -collector current v ce(sat) v i c i c -collector current i c -collector current single pulse test tamb=25c v ce - collector voltage i c -collector current safe operating area +175c +100c +25c -55c typical characteristics +25c -55c +100c +175c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 175 280 v i c =100 m a collector-emitter breakdown voltage v ces 175 280 v ic=100 m a collector-emitter breakdown voltage v ceo 120 150 v ic=10ma collector-emitter breakdown voltage v cev 175 280 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.8 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =130v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=130v collector-emitter saturation voltage v ce(sat) 22 120 220 50 160 310 mv mv mv i c =0.1a, i b =5ma* i c =1a, i b =20ma* i c =3a, i b =150ma* base-emitter saturation voltage v be(sat) 950 1000 mv i c =3a, i b =150ma* base-emitter turn-on voltage v be(on) 810 900 mv ic=3a, v ce =10v* static forward current transfer ratio h fe 275 300 50 400 450 110 15 1200 i c =10ma, v ce =10v* i c =1a, v ce =10v* i c =3a, v ce =10v* i c =6a, v ce =10v* transition frequency f t 130 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 17 30 pf v cb =10v, f=1mhz switching times t on 90 ns i c =1a, i b =10ma, v cc =50v t off 2400 ns i c =1a, i b = 10ma, v cc =50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%
ZTX1055A ZTX1055A 1ma 1ma 10ma 1ma 100ma 1a 10a 10ma 1ma 100ma 1a 10a 10ma 1ma 100ma 1a 10a +25c +100c -55c 200 400 600 v ce =10v 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 +25c i c /i b =20 i c /i b =30 i c /i b =50 v ce =10v i c /i b =20 i c /i b =20 +100c +175c +25c -55c 10a 1a 100ma 10ma 10ma 100ma 1a 10a 100v 10v 0.1v 1v 10 0.1 0.01 1 dc 1s 100ms 10ms 1ms 100us i c -collector current h fe v i c v be(sat) v ic v be(on) v i c v ce(sat) v i c i c -collector current v ce(sat) v i c i c -collector current i c -collector current single pulse test tamb=25c v ce - collector voltage i c -collector current safe operating area +175c +100c +25c -55c typical characteristics +25c -55c +100c +175c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 175 280 v i c =100 m a collector-emitter breakdown voltage v ces 175 280 v ic=100 m a collector-emitter breakdown voltage v ceo 120 150 v ic=10ma collector-emitter breakdown voltage v cev 175 280 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.8 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =130v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=130v collector-emitter saturation voltage v ce(sat) 22 120 220 50 160 310 mv mv mv i c =0.1a, i b =5ma* i c =1a, i b =20ma* i c =3a, i b =150ma* base-emitter saturation voltage v be(sat) 950 1000 mv i c =3a, i b =150ma* base-emitter turn-on voltage v be(on) 810 900 mv ic=3a, v ce =10v* static forward current transfer ratio h fe 275 300 50 400 450 110 15 1200 i c =10ma, v ce =10v* i c =1a, v ce =10v* i c =3a, v ce =10v* i c =6a, v ce =10v* transition frequency f t 130 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 17 30 pf v cb =10v, f=1mhz switching times t on 90 ns i c =1a, i b =10ma, v cc =50v t off 2400 ns i c =1a, i b = 10ma, v cc =50v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%
zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) facsimile: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 87 modular avenue 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny11725 hing fong road, kwai fong major countries world-wide telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 ? zetex plc 1995 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1055A spice model last revision 25/1/95 * .model ZTX1055A npn is=1.60e-12 nf=1.0 bf=500 ikf=4.0 vaf=120 + ise=4.0e-13 ne=1.4 nr=1.0 br=80 ikr=2.5 var=15 + isc=5.0e-10 nc=1.7 rb=0.1 re=0.040 rc=0.030 + cjc=63.3e-12 cje=512.6e-12 mjc=0.439 mje=0.373 + vjc=0.511 vje=0.800 tf=700e-12 tr=110e-9 * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. c b e e-line to92 compatible npn silicon planar medium power high gain transistor issue 3 ? january 1995 features *v ceo =120v * 3 amp continuous current * 6 amp pulse current * very low saturation voltage applications * automotive switching circuit * audio driver stages absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 175 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5v peak pulse current i cm 6a continuous collector current i c 3a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c ZTX1055A ZTX1055A
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